SAN1000
Pressure control during heat treatment (annealing) to the substrate and heat treatment by introducing inert gas is possible.
Pressure control during heat treatment (annealing) to the substrate and heat treatment by introducing inert gas is possible.
The temperature control of Max.1000deg.C is achievable and RF power source can be equipped with and the combination with other systems can be possible.
This is a vacuum evaporation system for the deposition of metal films and oxide films.
This is the space-saving automated substrate transfer arm which can connect with 3 plus series.
Precise temperature control, pressure control, water vapor introduction and rapid cooling are possible.
Various introduction ports.
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